Thermal annealing in hydrogen for 3-D profile transformation on silicon-on-insulator and sidewall roughness reduction

摘要

[[abstract]]© 2006 Institute of Electrical and Electronics Engineers-A fast, effective process using hydrogen annealing is introduced to perform profile transformation on silicon-on-insulator (SOI) and to reduce sidewall roughness on silicon surfaces. By controlling the dimensions of as-etched structures, microspheres with 1 mu m radii, submicron wires with 0.5 mu m radii, and a microdisk toroid with 0.2 mu m toroidal radius have been successfully demonstrated on SOI substrates. Utilizing this technique, we also observe the root-mean-square (rms) sidewall roughness dramatically reduced from 20 to 0.26 nm. A theoretical model is presented to analyze the profile transformation, and experimental results show this process can be engineered by several parameters including temperature, pressure, and time.